Esd Diode Structure

408 jin young choi. It is important to understand that not all esd diodes are simple diode clamps to the power supplies and ground.

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And a second region and a fourth region formed by doping the semiconductor substrate so that it has an n type conductivity.

Esd diode structure. 8 ratio of hbm esd voltage rating to the maximum tlp current capability for 11 different diode stack structures. If the data sheet does not include a specification how much current can a typical esd diode handle. Gaas hbt esd diode layout and its relationship to human body model rating.

Esd diodes are designed to handle current but only for a microsecond or less. Protection devices the effect of enlarging the p subr and p subl junction lengths in the d. Esd structure to the supply rails to protect the device.

There are many possible implementations that can be used such as multiple diodes in series diodes and resistors and back to back diodes. These esd structures are triggered if a signal is applied that exceeds the actual supply voltage of the device. Esd protection circuit to still apply the polysilicon diodes as the esd protection devices at the pad1 pin the concept of whole chip esd protec tion by using a more efficient vdd to vss esd clamp circuit to significantly improve esd level of the io pin 610 is ap plied into this smart card ic.

Structure optimization of esd diodes for input protection of cmos rf ics. 2 device to lower the current density at the junctions is next examined. Figs 12 13 illustrate a typical scr cross section and equivalent circuit.

All ics have built in device level esd structures that protect the ic against esd events during the manufacturing phase. A good rule of thumb is to restrict continuous current through an esd diode to less than 10ma. A scr structure may serve as an excellent esd protection device due to its deep snapback iv characteristic 4 5 23 25.

The two terminal integrated structure or esd diode performs a function similar to a conventional diode d 1 but is better suited to carry high currents and has less capacitance than a conventional diode d 1 with similar current carrying capabilities. The bi directional diode has a first device and a second device each including a first region and a third region formed by doping a semiconductor substrate so that it has a p type conductivity. The human body model hbm the machine model mm and the charged device model cdm.

Some of the more common implementations are detailed below. As an esd pulse appears at the anode a wrt cathode k it breaks down the bc junction of vertical pnn q1. A bi directional esd diode protects a circuit against electrostatic discharge esd.

These events are simulated by three different device level models. Detailed descriptions for each structure are in table i.

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